1. bookVolume 32 (2014): Edizione 4 (December 2014)
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eISSN
2083-134X
Prima pubblicazione
16 Apr 2011
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4 volte all'anno
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access type Accesso libero

Growth of large SbSI crystals

Pubblicato online: 19 Dec 2014
Volume & Edizione: Volume 32 (2014) - Edizione 4 (December 2014)
Pagine: 669 - 675
Dettagli della rivista
License
Formato
Rivista
eISSN
2083-134X
Prima pubblicazione
16 Apr 2011
Frequenza di pubblicazione
4 volte all'anno
Lingue
Inglese
Abstract

In this paper a novel method of SbSI single crystals fabrication is presented. In this method a sonochemically prepared SbSI gel is used as an intermediate product in a vapour growth process. The main advantages of the presented technique are as follows. First, the SbSI gel source material has lower temperature of sublimation and allows to avoid explosions during SbSI synthesis (the sonochemical synthesis is free of any explosion hazard). Second, but not least, the grown SbSI single crystals have smaller ratio of longitudinal and lateral dimensions. The cross sections of the presented crystals are relatively large (they are up to 9 mm2). The crystals have been characterized by X-ray diffraction, angle-resolved optical spectroscopy, and diffusive reflectivity.

Keywords

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