1. bookTom 32 (2014): Zeszyt 4 (December 2014)
Informacje o czasopiśmie
License
Format
Czasopismo
eISSN
2083-134X
Pierwsze wydanie
16 Apr 2011
Częstotliwość wydawania
4 razy w roku
Języki
Angielski
access type Otwarty dostęp

Preparation and microstructural characterization of Si(100) Ce1−x GdxO2−δ thin films prepared by pulsed laser deposition technique

Data publikacji: 19 Dec 2014
Tom & Zeszyt: Tom 32 (2014) - Zeszyt 4 (December 2014)
Zakres stron: 541 - 546
Informacje o czasopiśmie
License
Format
Czasopismo
eISSN
2083-134X
Pierwsze wydanie
16 Apr 2011
Częstotliwość wydawania
4 razy w roku
Języki
Angielski
Abstract

Microstructural properties of Ce1-x GdxO2-δ (x = 0 to 0.3) thin films prepared by pulsed laser deposition technique were studied. The thin films were deposited on Si(100) substrate at a substrate temperature of 973 K at the oxygen partial pressure of 0.2 Pa using KrF excimer laser with energy of 220 mJ. The prepared thin films were characterized by X-ray diffraction, Raman spectroscopy and atomic force microscopy. X-ray diffraction analysis confirmed the polycrystalline nature of the thin films. Crystallite size, strain and dislocation density were calculated. The Raman studies revealed the formation of Ce-O with the systematic variation of peak intensity and full width half maxima depending on concentration of gadolinium dopant. The thickness of the films was estimated using Talystep profiler. The surface roughness was estiamted based on AFM.

Keywords

[1] Yabe S., Sato T., J. Solid State Chem., 171 (2003), 7. http://dx.doi.org/10.1016/S0022-4596(02)00139-110.1016/S0022-4596(02)00139-1Search in Google Scholar

[2] Sainz M.A., Duran A., Fernadez-Navarro J.M., J. Non-Cryst. Solids, 121 (1990), 315. http://dx.doi.org/10.1016/0022-3093(90)90150-K10.1016/0022-3093(90)90150-KSearch in Google Scholar

[3] Al-Robaee M.S., Rao K.N., Mohan S., J. Appl. Phys., 71 (1992), 2380. http://dx.doi.org/10.1063/1.35109310.1063/1.351093Search in Google Scholar

[4] Zhengg S.-Y., Andersson-Fäldt A.M., Stjerna, Granqvit C.G., Appl. Optics, 32 (1993), 6303. http://dx.doi.org/10.1364/AO.32.00630310.1364/AO.32.006303Search in Google Scholar

[5] Ghanashyam Krishna M., Hartide A., Bhattacharya A.K., Mater. Sci. Eng. B-Adv., 55 (1998), 14. http://dx.doi.org/10.1016/S0921-5107(98)00203-710.1016/S0921-5107(98)00203-7Search in Google Scholar

[6] Ozer N., Sol. Energ. Mat. Sol. C., 68 (2001), 391. http://dx.doi.org/10.1016/S0927-0248(00)00371-810.1016/S0927-0248(00)00371-8Search in Google Scholar

[7] Phillips J.M., J. Appl. Phys., 79 (1996), 1829. http://dx.doi.org/10.1063/1.36267510.1063/1.362675Search in Google Scholar

[8] Chikyow T., Bedair S.M., Tye L., Elmasry N.A., Appl. Phys. Lett., 65 (1994), 1030. http://dx.doi.org/10.1063/1.11301110.1063/1.113011Search in Google Scholar

[9] Suzuki M., Ami T., Mater. Sci. Eng. B-Adv., 41 (1996), 166. http://dx.doi.org/10.1016/S0921-5107(96)01646-710.1016/S0921-5107(96)01646-7Search in Google Scholar

[10] Nakazawa T., Inoue T., Satoh M., Yamamoto Y., Jpn. J. Appl. Phys., 34 (1995), 548. http://dx.doi.org/10.1143/JJAP.34.54810.1143/JJAP.34.548Search in Google Scholar

[11] Roh Y.H., Kim K., Jung D.G., Jpn J. Appl. Phys., 36 (1997), L1681. http://dx.doi.org/10.1143/JJAP.36.L168110.1143/JJAP.36.L1681Search in Google Scholar

[12] Granqvist C.G, Azens A., Hjelm A., Kullman L., Niklasson G.A., Ronnow D., Strommemattsson M., Vaivars G., Sol. Energy, 63 (1998), 199. http://dx.doi.org/10.1016/S0038-092X(98)00074-710.1016/S0038-092X(98)00074-7Search in Google Scholar

[13] Elidrissi B., Addou M., Regragui M., Monty C., Kachouane A., Thin Solid Films, 379 (2000), 23. http://dx.doi.org/10.1016/S0040-6090(00)01404-810.1016/S0040-6090(00)01404-8Search in Google Scholar

[14] Nilgun O., Sol. Energ. Mat. Sol. C., 68 (2001), 391. http://dx.doi.org/10.1016/S0927-0248(00)00371-810.1016/S0927-0248(00)00371-8Search in Google Scholar

[15] Stromme-Mattson M., Azens A., Niklasson G.A., Granqvist C.G., Purans J., J. Appl. Phys., 81 (1997), 6432. http://dx.doi.org/10.1063/1.36442410.1063/1.364424Search in Google Scholar

[16] Hong S., Kim S.H., Kim W.J, Yoon H.H., Curr. Appl. Phys., 11 (2011), 163. http://dx.doi.org/10.1016/j.cap.2011.03.07110.1016/j.cap.2011.03.071Search in Google Scholar

[17] Graboy I.E., Markov N.V., Maleev V.V., Kaul A.R., Polyakov S.N., Svetchnikov V.L., Zandbergen H.W., Dahmen K.H., J. Alloy. Compd., 251 (1997), 318. http://dx.doi.org/10.1016/S0925-8388(96)02700-410.1016/S0925-8388(96)02700-4Search in Google Scholar

[18] Paivasaari J., Putkonen M., Niinisto L., J. Mater. Chem., 12 (2002), 1828. http://dx.doi.org/10.1039/b108333c10.1039/b108333cSearch in Google Scholar

[19] Elidrissi B., Addou M., Regragui M., Monty C., Bougrine A., Kachouane A., Thin Solid Films, (2000), 379. 10.1016/S0040-6090(00)01404-8Search in Google Scholar

[20] Muthukkumaran K., Kuppusami P., Mathews, Mohandas E., Selladurai S., Mater. Sci.-Poland., 25 (2007), 671. Search in Google Scholar

[21] Cossarutto L., Chaoui N., Millon E., Muller J.F., Lambert J., Alnot M., Appl. Surf. Sci., 126 (1998), 352. http://dx.doi.org/10.1016/S0169-4332(98)00188-310.1016/S0169-4332(98)00188-3Search in Google Scholar

[22] Chaudhuri T., Phok S., Bhattacharya R., Thin Solid Films, 515 (2007), 6971. http://dx.doi.org/10.1016/j.tsf.2007.01.05310.1016/j.tsf.2007.01.053Search in Google Scholar

[23] Venkatesan T., Green S.M., TIP, 2 (1996), 22. Search in Google Scholar

[24] Peng R., Xia C., Liu X., Peng D., Meng G., Solid State Ionics, 152–153 (2002), 561. http://dx.doi.org/10.1016/S0167-2738(02)00365-X10.1016/S0167-2738(02)00365-XSearch in Google Scholar

[25] Sherrer P., Göttinger Nachrichten Math. Phys., 2 (1918), 98. Search in Google Scholar

[26] Lalitha S., Sathyamoorthy R., Senthilarasu S., Subbarayan A., Natarajan K., Sol. Energ. Mat. Sol. C., 82 (2004), 187. http://dx.doi.org/10.1016/j.solmat.2004.01.01710.1016/j.solmat.2004.01.017Search in Google Scholar

[27] Pal U., Samantha D., Ghorai S., Chaudhuri A.K., J. Appl. Phys., 74 (1993), 6368. http://dx.doi.org/10.1063/1.35516110.1063/1.355161Search in Google Scholar

[28] Bhuiyan M.R.A., Alauddin M., Azad A., Hasan S.M.F., Indian J. Pure Ap. Phy., 49 (2011), 180. Search in Google Scholar

[29] Choudhury B., Choudhury A., Curr. Appl. Phys., 13 (2013), 217. http://dx.doi.org/10.1016/j.cap.2012.07.01410.1016/j.cap.2012.07.014Search in Google Scholar

[30] Ruiz-Trejo E., J. Phys. Chem. Solids, 74 (2013), 605. http://dx.doi.org/10.1016/j.jpcs.2012.12.01410.1016/j.jpcs.2012.12.014Search in Google Scholar

Polecane artykuły z Trend MD

Zaplanuj zdalną konferencję ze Sciendo