<abstract xmlns="http://www.w3.org/1999/xhtml"><p> In this paper, selected problems occurring during GaN epitaxy on Si substrates are correlated with in-situ interferometer observations based on structures fabricated using 3×2” Thomas Swan Close Coupled Showerhead MOVPE system. Samples were epitaxially grown on highly resistive (> 500cm) p-type 2” silicon substrates. The growth was observed using an interferometer acquiring reflectance traces in-situ. To avoid issues that are shown in this paper, different approaches of the so-called buffer layer were used by depositing them on Si before the growth of GaN. Different material qualities of grown GaN layers were obtained by variation in films constituting the buffer layer grown before the desirable GaN film. The study shows the evolution of the grown samples, improvement of various parameters and also gradual reduction of material issues discussed in this paper. Improvement in GaN layer was mainly observed by SEM characterization and studying the growth mechanisms through observation of reflectance traces obtained in-situ.</p></abstract>

In this paper, selected problems occurring during GaN epitaxy on Si substrates are correlated with in-situ interferometer observations based on structures fabricated using 3×2” Thomas Swan Close Coupled Showerhead MOVPE system. Samples were epitaxially grown on highly resistive (> 500cm) p-type 2” silicon substrates. The growth was observed using an interferometer acquiring reflectance traces in-situ. To avoid issues that are shown in this paper, different approaches of the so-called buffer layer were used by depositing them on Si before the growth of GaN. Different material qualities of grown GaN layers were obtained by variation in films constituting the buffer layer grown before the desirable GaN film. The study shows the evolution of the grown samples, improvement of various parameters and also gradual reduction of material issues discussed in this paper. Improvement in GaN layer was mainly observed by SEM characterization and studying the growth mechanisms through observation of reflectance traces obtained in-situ.

Correlation of Selected Problems During Gan Movpe Epitaxy on si Substrates with in–Situ Interferometer Observation

The Faculty of Microsystem Electronics and Photonics, Wroc law University of Technology, Janiszewskiego 11/17, 50-372 Wroc law, Poland

Journal of Electrical Engineering

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

In this paper, selected problems occurring during GaN epitaxy on Si substrates are correlated with in-situ interferometer observations based on structures...

Correlation of Selected Problems During Gan Movpe Epitaxy on si Substrates with in–Situ Interferometer Observation

Publicado en línea: 05 nov 2014

Páginas: 294 - 298

Recibido: 15 jun 2014

DOI: https://doi.org/10.2478/jee-2014-0047

Palabras clave
Gallium nitride, GaN on Si, MOVPE, transition AlGaN, in-situ observation

© Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Correlation of Selected Problems During Gan Movpe Epitaxy on si Substrates with in–Situ Interferometer Observation

Publicado en línea: 05 nov 2014

Páginas: 294 - 298

Recibido: 15 jun 2014

DOI: https://doi.org/10.2478/jee-2014-0047

Palabras claveGallium nitride, GaN on Si, MOVPE, transition AlGaN, in-situ observation

© Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Palabras clave
Gallium nitride, GaN on Si, MOVPE, transition AlGaN, in-situ observation