<abstract xmlns="http://www.w3.org/1999/xhtml"><p> The paper deals with optical characterization of the Al0.295Ga0.705As/GaAs multi-quantum well light emitting diode (LED) structure with photonic crystal (2D PhC) patterned on the top of the structure using Electron Beam Direct Write Lithography (EBDWL). Light-current characteristics measured by integrating sphere shows increase of extracted light intensity as 21.1%. Additionally, extracted light intensity was studied by far-field measurements as a complementary method to light-current characteristics. The far-field measurements show increase of extracted light intensity as 31.2%. We suggest this method as more suitable for evaluation of extracted light intensity because it omits emission from edges of the LED and thus light is measured only from the area where PhC is patterned</p></abstract>

The paper deals with optical characterization of the Al0.295Ga0.705As/GaAs multi-quantum well light emitting diode (LED) structure with photonic crystal (2D PhC) patterned on the top of the structure using Electron Beam Direct Write Lithography (EBDWL). Light-current characteristics measured by integrating sphere shows increase of extracted light intensity as 21.1%. Additionally, extracted light intensity was studied by far-field measurements as a complementary method to light-current characteristics. The far-field measurements show increase of extracted light intensity as 31.2%. We suggest this method as more suitable for evaluation of extracted light intensity because it omits emission from edges of the LED and thus light is measured only from the area where PhC is patterned

Far Field Measurements of Phc Led Prepared by E–Beam Lithography

Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology in Bratislava, Ilkovičova 3, 812 19 Bratislava, Slovakia

Institute of Informatics, Slovak Academy of Sciences, Dúbravská cesta 9, 845 07 Bratislava, Slovakia

Dept. of Physics, Faculty of Electrical Engineering, University of Zilina, Univerzitná 1, 010 26 ˇ Zilina, Slovakia

Journal of Electrical Engineering

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

{"article-title":"Far Field Measurements of Phc Led Prepared by E\u2013Beam Lithography"}

The paper deals with optical characterization of the Al0.295Ga0.705As/GaAs multi-quantum well light emitting diode (LED) structure with photonic crystal (2D...

Far Field Measurements of Phc Led Prepared by E–Beam Lithography

Publicado en línea: 05 nov 2014

Páginas: 309 - 312

Recibido: 15 jul 2014

DOI: https://doi.org/10.2478/jee-2014-0050

Palabras clave
LED, Electron beam direct write lithography, photonic crystal, far field, light extraction

© Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Far Field Measurements of Phc Led Prepared by E–Beam Lithography

Publicado en línea: 05 nov 2014

Páginas: 309 - 312

Recibido: 15 jul 2014

DOI: https://doi.org/10.2478/jee-2014-0050

Palabras claveLED, Electron beam direct write lithography, photonic crystal, far field, light extraction

© Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Palabras clave
LED, Electron beam direct write lithography, photonic crystal, far field, light extraction