<abstract xmlns="http://www.w3.org/1999/xhtml"><p> GaInNAs alloys are mostly used as an active part of light sources for long wavelength telecom applications. Beside this, these materials are used as thin quantum wells (QWs), and a need is to grow thick layers of such semiconductor alloys for photodetectors and photovoltaic cells applications. However, structural characterization of the GaInNAs layers is hindered by non-homogeneity of the In and N distributions along the layer. In this work the challenges of the structural characterization of doped thick GaInNAs layers grown by atmospheric pressure metalorganic vapour phase epitaxy (APMOVPE) will be presented</p></abstract>

GaInNAs alloys are mostly used as an active part of light sources for long wavelength telecom applications. Beside this, these materials are used as thin quantum wells (QWs), and a need is to grow thick layers of such semiconductor alloys for photodetectors and photovoltaic cells applications. However, structural characterization of the GaInNAs layers is hindered by non-homogeneity of the In and N distributions along the layer. In this work the challenges of the structural characterization of doped thick GaInNAs layers grown by atmospheric pressure metalorganic vapour phase epitaxy (APMOVPE) will be presented

Structural Characterization of Doped Thick Gainnas Layers - Ambiguities and Challenges

Faculty of Microsystem Electronics and Photonics, Wroc law University of Technology, Z. Janiszewskiego 11/17, 50-372, Wroc law, Poland

Institute of Physics, Wroc law University of Technology, Wyb. Wyspia´nskiego 27, 50-370, Wroclaw, Poland

Faculty of Microsystem Electronics and Photonics, Wroc law University of Technology, Z. Janiszewskiego 11/17, 50-372, Wroclaw, Poland

Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovičova 3, 812 19 Bratislava, Slovakia

International Laser Centre, Ilkovičova 3, 841 04 Bratislava, Slovakia

Institute of Physics, Polish Academy of Science, Al. Lotników 32/46, 02-668 Warsaw, Poland

Journal of Electrical Engineering

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

GaInNAs alloys are mostly used as an active part of light sources for long wavelength telecom applications. Beside this, these materials are used as thin...

Structural Characterization of Doped Thick Gainnas Layers - Ambiguities and Challenges

Publicado en línea: 05 nov 2014

Páginas: 299 - 303

Recibido: 15 jun 2014

DOI: https://doi.org/10.2478/jee-2014-0048

Palabras clave
dilute nitrides, GaInNAs, composition determination, HRXRD

© Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Structural Characterization of Doped Thick Gainnas Layers - Ambiguities and Challenges

Publicado en línea: 05 nov 2014

Páginas: 299 - 303

Recibido: 15 jun 2014

DOI: https://doi.org/10.2478/jee-2014-0048

Palabras clavedilute nitrides, GaInNAs, composition determination, HRXRD

© Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Palabras clave
dilute nitrides, GaInNAs, composition determination, HRXRD