[[1] WEYERS, M.-SATO, M.-ANDO, H. : Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers, Japanese Journal of Applied Physics Part 2 31 No. 7A (1992), 853-855.10.1143/JJAP.31.L853]Search in Google Scholar
[[2] BISPING, D.-PUCICKI, D.-FISCHER, M.-HOEFLING, S.-FORCHEL, A. : Influence of Arsenic Flux on The Annealing Properties of GaInNAs Quantum Wells for Long Wavelength Laser Applications Around 1.6 μm, Journal of Crystal Growth 311 (2009), 1715-1718.10.1016/j.jcrysgro.2008.09.206]Search in Google Scholar
[[3] KURTZ, S. R.-ALLERMAN, A. A.-JONES, E. D.-GEE, J. M.-BANAS, J. J.-HAMMONS, B. E. : InGaAsN Solar Cells with 1.0 eV Band Gap, Lattice Matched to GaAs, Applied Physics Letters 74 No. 5 (1999), 729-731.10.1063/1.123105]Search in Google Scholar
[[4] PUCICKI, D.-BIELAK, K.-KUDRAWIEC, R.-RADZIEWICZ, D.-´SCIANA, B. : Determination of Indium and Nitrogen Contents of InGaAsN Quantum Wells by HRXRD Study Supported by BAC Calculation of The Measured Energy Gap, Materials Science-Poland 31 No. 4 (2013), 489-494..10.2478/s13536-013-0137-1]Search in Google Scholar
[[5] LI, W.-PESSA, M.-LIKONEN, J. : Lattice Parameter in GaNAs Epilayerson GaAs: Deviation from Vegard’s Law, Applied Physics Letters 78 No. 19 (2001), 2864-2866.10.1063/1.1370549]Search in Google Scholar
[[6] ALBO, A.-CYTERMANN, C.-BAHIR, G.-FEKETE, D. : Utilizing The Interface Adsorption of Nitrogen or The Growth of High-Quality GaInAsN/GaAs Quantum Wells by Metal Organic Chemical Vapour Deposition for Near Infrared Applications, Applied Physics Letters 96 (2010), 141102.10.1063/1.3360216]Search in Google Scholar
[[7] PUCICKI, D.-BIELAK, K.-CIANA, B.-RADZIEWICZ. D.-LATKOWSKA, M.-KOV´A ˇC , J.-VINCZE, A.-TLACZALA, M. : Determination of Composition of Non-Homogeneous GaInNAs Layers, In press. ]Search in Google Scholar
