Far Field Measurements of Phc Led Prepared by E–Beam Lithography
Publicado en línea: 05 nov 2014
Páginas: 309 - 312
Recibido: 15 jul 2014
DOI: https://doi.org/10.2478/jee-2014-0050
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© Faculty of Electrical Engineering and Information Technology, Slovak University of Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.
The paper deals with optical characterization of the Al0.295Ga0.705As/GaAs multi-quantum well light emitting diode (LED) structure with photonic crystal (2D PhC) patterned on the top of the structure using Electron Beam Direct Write Lithography (EBDWL). Light-current characteristics measured by integrating sphere shows increase of extracted light intensity as 21.1%. Additionally, extracted light intensity was studied by far-field measurements as a complementary method to light-current characteristics. The far-field measurements show increase of extracted light intensity as 31.2%. We suggest this method as more suitable for evaluation of extracted light intensity because it omits emission from edges of the LED and thus light is measured only from the area where PhC is patterned